Advanced Finishing Services
- Precision grinding and lapping
- Engineering design and support
Manufacturing Options
- Injection molding
- Isostatic pressing
- Dry pressing
- Hot pressing
- Slip casting
Material Properties Reaction Bonded Silicon Carbide
Density | gm/cc | 3.10 |
---|---|---|
Crystal Size (Average) | Microns | 12 |
Water absorption (open porosity) | % | 0 |
Gas permeability | % | 0 |
Color | ¯ | Black |
Flexural Strength (MOR) 20°C | MPa (psi x 103) | 462 (67) |
---|---|---|
Elastic Modulus 20°C | GPa (psi x 106) | 393 (57) |
Poisson’s Ratio 20°C | ¯ | 0.20 |
Compressive Strength 20°C | MPa (psi x 103) | 2700 (363) |
Hardness | GPa (kg/mm2) | 26 (2500) |
R45N | – | |
Tensile Strength 25°C | MPa (psi x 103) | 307 (44.5) |
Fracture Toughness K(I c) | mpa m1/2 | 4 |
Thermal Conductivity 20°C | W/m K | 125.0 |
---|---|---|
Coefficient of Thermal Expansion 25-1000°C | X 10-6/°C | 4.3 |
Specific Heat 100°C | 880 J/kg*K | 800 |
Thermal Shock Resistance ΔTc | °C | 400 |
Maximum Use Temperature | °C | 1000 |
Dielectric Strength 6.35mm | ac-kV/mm (ac V/mil) | – |
---|---|---|
Dielectric Constant 1 MHz | 25°C | – |
Dielectric Loss (tan delta) 1 MHz | 25°C | – |
Volume Resistivity 25°C | ohm-cm | |
500°C | ohm-cm | |
1000°C | ohm-cm |
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.
Sintered Silicon Carbide
Density | gm/cc | 3.15 |
---|---|---|
Crystal Size (Average) | Microns | 3-10 |
Water absorption (open porosity) | % | 0 |
Gas permeability | % | 0 |
Color | ¯ | Black |
Flexural Strength (MOR) 20°C | MPa (psi x 103) | 480 (70) |
---|---|---|
Elastic Modulus 20°C | GPa (psi x 106) | 410 (59) |
Poisson’s Ratio 20°C | ¯ | 0.21 |
Compressive Strength 20°C | MPa (psi x 103) | 3500 (507) |
Hardness | GPa (kg/mm2) | 26 (2800) |
R45N | – | |
Tensile Strength 25°C | MPa (psi x 103) | – |
Fracture Toughness K(I c) | mpa m1/2 | 4 |
Thermal Conductivity 20°C | W/m K | 150.0 |
---|---|---|
Coefficient of Thermal Expansion 25-1000°C | X 10-6/°C | 4.4 |
Specific Heat 100°C | 880 J/kg*K | 800 |
Thermal Shock Resistance ΔTc | °C | 300 |
Maximum Use Temperature | °C | 1600 |
Dielectric Strength 6.35mm | ac-kV/mm (ac V/mil) | – |
---|---|---|
Dielectric Constant 1 MHz | 25°C | – |
Dielectric Loss (tan delta) 1 MHz | 25°C | – |
Volume Resistivity 25°C | ohm-cm | |
500°C | ohm-cm | |
1000°C | ohm-cm |
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.
Silicon Carbide Applications
- Bushings
- Nozzles
- Sealing rings
- Friction bearings
- Special components