- Isostatic pressing
Advanced Finishing Services
Precision grinding and lapping
- Engineering design and support
Silicon carbide (SiC) ceramics maintains its high mechanical strength in temperatures as high as 1,400C It has higher chemical corrosion resistance than other ceramics.
Ortech offers a complete family of fully dense silicon carbide ceramics materials.
Ortech employs a reaction-bonding process to manufacture SiC that retains approximately 10% metallic silicon. Our bonded SiC can be formed by casting, dry pressing, or isostatic pressing.
Ortech produces high-purity Silicon Carbide (SiC) using a direct sintering process. This process allows for low-cost forming methods such as casting, dry pressing, and isostatic pressing, while retaining high-purity levels.
|Reaction Bonded Silicon Carbide||Sintered Silicon Carbide|
|Crystal Size Average Microns||12||3-10|
|Water Absorption %||0||0|
|Gas Permeability –||0||0|
|Flexural Strength (MOR) 20° C MPa (psi x 103)||462 (67)||480 (70)|
|Elastic Modulus 20° C GPa (psi x 106)||393 (57)||410 (59)|
|Poisson’s Ratio 20° C –||0.20||0.21|
|Compressive Strength 20° C MPa (psi x 103)||2700 (363)||3500 (507)|
|Hardness Rockwell R45N||–||–|
|Tensile Strength 25° C MPa (psi x 103)||307 (44.5)|
|Fracture Toughness K(I c) MPam1/2||4||4|
|Thermal Conductivity 20° C W/m K||125.0||150.0|
|Coefficient of Thermal Expansion 25-1000° C 1X 10-6/°C||4.3||4.4|
|Specific Heat 100° C J/kg*K||800||800|
|Thermal Shock Resistance Δ Tc °C||400||300|
|Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)||–||–|
|Dielectric Constant 1 MHz 25° C||–||–|
|Dielectric Loss (tan delta) 1 MHz 25° C||–||–|
|Volume Resistivity 25° C ohm-cm||< 10 3||< 10 5|
|Volume Resistivity 500° C ohm-cm||< 10 3||< 10 3|
|Volume Resistivity 1000° C ohm-cm||< 10 3||< 10 2|