Project Description
Features
- High thermal conductivity as high as metallic aluminum, 7 times higher than aluminum oxide (Al2O3)
- Similar coefficient of thermal expansion to that of silicon (Si)
- High electric insulation
- Highly resistant to plasma under fluorine-based gas atmosphere
- Highly dense and fine-grained structure
Manufacturing Options
- Roll compacting
- Isostatic pressing
Aluminum Nitride Substrates
Advanced Finishing Services
- Precision grinding and lapping
- Laser machining
- Engineering design and support
Metallizing


Density | gm/cc | 3.26 |
---|---|---|
Crystal Size (Average) | Microns | 3 |
Water absorption (open porosity) | % | 0 |
Gas permeability | % | 0 |
Color | ¯ | Gray |
Flexural Strength (MOR) 20°C | MPa (psi x 103) | 340 |
---|---|---|
Elastic Modulus 20°C | GPa (psi x 106) | 330 |
Poisson’s Ratio 20°C | ¯ | 0.25 |
Compressive Strength 20°C | MPa (psi x 103) | – |
Hardness | GPa (kg/mm2) | 11 |
R45N | – | |
Tensile Strength 25°C | MPa (psi x 103) | – |
Fracture Toughness K(I c) | mpa m1/2 | 3 |
Thermal Conductivity 20°C | W/m K | 180.0 |
---|---|---|
Coefficient of Thermal Expansion 25-1000°C | X 10-6/°C | 5.0 |
Specific Heat 100°C | 880 J/kg*K | 740 |
Thermal Shock Resistance ΔTc | °C | – |
Maximum Use Temperature | °C | 800 |
Dielectric Strength 6.35mm | ac-kV/mm (ac V/mil) | 17 |
---|---|---|
Dielectric Constant 1 MHz | 25°C | 9 |
Dielectric Loss (tan delta) 1 MHz | 25°C | <0.001 |
Volume Resistivity 25°C | ohm-cm | |
500°C | ohm-cm | |
1000°C | ohm-cm |
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.