Project Description


  • High thermal conductivity as high as metallic aluminum, 7 times higher than aluminum oxide (Al2O3)
  • Similar coefficient of thermal expansion to that of silicon (Si)
  • High electric insulation
  • Highly resistant to plasma under fluorine-based gas atmosphere
  • Highly dense and fine-grained structure

Manufacturing Options

  • Roll compacting
  • Isostatic pressing
  • Aluminum Nitride Substrates

Advanced Finishing Services

  • Precision grinding and lapping
  • Laser machining
  • Engineering design and support
  • Metallizing

Aluminum Nitride (AlN) Substrates
Crystal Size (Average)Microns3
Water absorption (open porosity)%0
Gas permeability%0
Flexural Strength (MOR) 20°CMPa (psi x 103)340
Elastic Modulus 20°CGPa (psi x 106) 330
Poisson’s Ratio 20°C¯ 0.25
Compressive Strength 20°CMPa (psi x 103) –
HardnessGPa (kg/mm2) 11
R45N –
Tensile Strength 25°CMPa (psi x 103) –
Fracture Toughness K(I c)mpa m1/2 3
Thermal Conductivity 20°CW/m K80.0
Coefficient of Thermal Expansion 25-1000°CX 10-6/°C5.0
Specific Heat 100°C880 J/kg*K740
Thermal Shock Resistance   ΔTc °C
 Maximum Use Temperature  °C 800
Dielectric Strength 6.35mmac-kV/mm (ac V/mil) 17
Dielectric Constant 1 MHz25°C 9
Dielectric Loss (tan delta) 1 MHz25°C <0.001
Volume Resistivity 25°Cohm-cm
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.