Aluminum Nitride (AlN)

Ortech Inc. provides state-of-the-art Aluminum Nitride (AlN) manufactured by the most cost-effective processes. Ortech also maintains efficient, large-scale manufacturing facilities that support quick-turn prototype development and high-volume production. AlN has found to replace beryllium oxide (BeO) in the semiconductor industry due to BeO’s toxicity, in addition to the thermal expansion coefficient of AlN is lower than BeO or Alumina, and closely matches that of the Silicon wafers used in electronics. Electronic and structural grades of this material exist, classified as such by the thermal conductivity, which is controlled by the purity of the AlN. Pristine material is white, high-purity is tan, and a gray color indicates contaminants.

Features

  • High thermal conductivity as high as metallic aluminum, 7 times higher than aluminum oxide (Al2O3)
  • Similar coefficient of thermal expansion to that of silicon (Si)
  • High electric insulation
  • Highly resistant to plasma under fluorine-based gas atmosphere
  • Highly dense and fine-grained structure

Manufacturing Options

  • Roll compacting
  • Isostatic pressing

  • Aluminum Nitride Substrates

Advanced Finishing Services

  • Precision grinding and lapping
  • Laser machining
  • Engineering design and support

  • Metallizing

Aluminum Nitride (AlN)Aluminum Nitride (AlN) Substrates
Density gm/cc 3.26
Crystal Size (Average) Microns 3
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Gray
Flexural Strength (MOR) 20°C MPa (psi x 103) 340
Elastic Modulus 20°C GPa (psi x 106)  330
Poisson’s Ratio 20°C ¯  0.25
Compressive Strength 20°C MPa (psi x 103)  –
Hardness GPa (kg/mm2)  11
R45N  –
Tensile Strength 25°C MPa (psi x 103)  –
Fracture Toughness K(I c) mpa m1/2  3
Thermal Conductivity 20°C W/m K 180.0
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 5.0
Specific Heat 100°C 880 J/kg*K 740
Thermal Shock Resistance   ΔTc  °C –
 Maximum Use Temperature   °C  800
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  17
Dielectric Constant 1 MHz 25°C  9
Dielectric Loss (tan delta) 1 MHz 25°C  <0.001
Volume Resistivity 25°C ohm-cm
                            500°C ohm-cm
                            1000°C ohm-cm
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.