Project Description

Sample Products

CVD Silicon Carbide

CVD Silicon carbide ceramics as excellent thermal resistance and excellent physical shock resistance.The outstanding properties of high chemical resistance and high purity make CVD Silicon Carbide natural choice for Semiconductor Applications
Ortech CVD Silicon Carbide is recognized as the premium choice for components in Rapid Thermal Processing Applications and Plasma Etch Applications, especially in applications where chemical resistance, high temperature, rapid thermal cycling, and ultra-high purity are system requirements.

Advanced Finishing Services

  • Precision grinding and lapping
  • Engineering design and support

Manufacturing Options

  • CVD SiC
  • Max Size: Dim 500mm

Material Properties CVD Silicon Carbide

Density gm/cc 3.21
Crystal Size (Average) Microns 5
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Black
Flexural Strength (MOR) 20°C MPa (psi x 103) 468 (68)
Elastic Modulus 20°C GPa (psi x 106) 462 (67)
Poisson’s Ratio 20°C ¯ 0.21
Compressive Strength 20°C MPa (psi x 103) —
Hardness GPa (kg/mm2) 27
KNOOP 1000 gm  2750
Tensile Strength 25°C MPa (psi x 103) —
Fracture Toughness K(I c) MPam1/2 3.5
Thermal Conductivity 20°C W/m K 115.0
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 3.1
Specific Heat 100°C 880 J/kg*K —
Thermal Shock Resistance   ΔTc  °C —
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  –
Dielectric Constant 1 MHz 25°C  –
Dielectric Loss (tan delta) 1 MHz 25°C  –
Volume Resistivity 25°C ohm-cm  > 106
                            500°C ohm-cm
                            1000°C ohm-cm
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.