Silicon Carbide Ceramics SiC

Silicon Carbide Ceramics SiC 2017-12-05T15:33:13+00:00

Project Description

Sample Products

Advanced Finishing Services

  • Precision grinding and lapping
  • Engineering design and support

Manufacturing Options

  • Injection molding
  • Isostatic pressing
  • Dry pressing
  • Hot pressing
  • Slip casting

Material Properties Reaction Bonded Silicon Carbide

Density gm/cc 3.10
Crystal Size (Average) Microns 12
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Black
Flexural Strength (MOR) 20°C MPa (psi x 103)  462 (67)
Elastic Modulus 20°C GPa (psi x 106)  393 (57)
Poisson’s Ratio 20°C ¯  0.20
Compressive Strength 20°C MPa (psi x 103)  2700 (363)
Hardness GPa (kg/mm2)  26 (2500)
R45N  –
Tensile Strength 25°C MPa (psi x 103)  307 (44.5)
Fracture Toughness K(I c) mpa m1/2  4
Thermal Conductivity 20°C W/m K 125.0
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 4.3
Specific Heat 100°C 880 J/kg*K 800
Thermal Shock Resistance   ΔTc  °C 400
 Maximum Use Temperature   °C  1000
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  –
Dielectric Constant 1 MHz 25°C  –
Dielectric Loss (tan delta) 1 MHz 25°C  –
Volume Resistivity 25°C ohm-cm
                            500°C ohm-cm
                            1000°C ohm-cm
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.

Sintered Silicon Carbide

Density gm/cc 3.15
Crystal Size (Average) Microns 3-10
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Black
Flexural Strength (MOR) 20°C MPa (psi x 103) 480 (70)
Elastic Modulus 20°C GPa (psi x 106)  410 (59)
Poisson’s Ratio 20°C ¯  0.21
Compressive Strength 20°C MPa (psi x 103)  3500 (507)
Hardness GPa (kg/mm2)  26 (2800)
R45N  –
Tensile Strength 25°C MPa (psi x 103)  –
Fracture Toughness K(I c) mpa m1/2  4
Thermal Conductivity 20°C W/m K 150.0
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 4.4
Specific Heat 100°C 880 J/kg*K 800
Thermal Shock Resistance   ΔTc  °C 300
 Maximum Use Temperature   °C  1600
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  –
Dielectric Constant 1 MHz 25°C  –
Dielectric Loss (tan delta) 1 MHz 25°C  –
Volume Resistivity 25°C ohm-cm
                            500°C ohm-cm
                            1000°C ohm-cm
*The chart is intended to illustrate typical properties. Property values vary with method of manufacture, size, and shape of part. Data contained herein is not to be construed as absolute and does not constitute a representation or warranty for which Ortech, Inc. assumes legal responsibility.

Silicon Carbide Applications

  • Bushings
  • Nozzles
  • Sealing rings
  • Friction bearings
  • Special components